Study of scattering in 1D nanostructured semiconductor devices using Monte Carlo simulation
Identifieur interne : 008311 ( Main/Repository ); précédent : 008310; suivant : 008312Study of scattering in 1D nanostructured semiconductor devices using Monte Carlo simulation
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Abstract
Semiconductor modeling and characterization of ternary materials have been performed using simulation. Ternary semiconductors such as AlxGa1-xAs, Gaxln1-xAs and Alxln1-xAs have been studied using Monte Carlo Simulation. Standard parameters like device dimension, donor concentration, temperature, electric field, etc have been considered. Drift velocity with respect to applied electric field in the range of 10kv/cm - 60kv/cm has been observed for three ternary semiconductors. It has been found that up to 30kv/cm, velocities for different compositions show major variations. But after 30kv/cm, they show less variation from each other. It is observed that, with an increase in applied field, the G valley electron population decreases while L and X valley population increases. The scattering methods that have been considered during the study of transport properties are Polar Optical Phonon Scattering (absorption and emission), Intervalley scattering, Ionized Impurity Scattering.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of scattering in 1D nanostructured semiconductor devices using Monte Carlo simulation</title><author><name sortKey="Sarwar, Hasan" uniqKey="Sarwar H">Hasan Sarwar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka</s1><s2>Dhaka 1000</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Dhaka 1000</wicri:noRegion></affiliation></author><author><name sortKey="Rafique, Shahida" uniqKey="Rafique S">Shahida Rafique</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka</s1><s2>Dhaka 1000</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Dhaka 1000</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0319739</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 07-0319739 INIST</idno><idno type="RBID">Pascal:07-0319739</idno><idno type="wicri:Area/Main/Corpus">007A04</idno><idno type="wicri:Area/Main/Repository">008311</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Electric field effect</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Inorganic compound</term><term>Monte Carlo method</term><term>Nanostructure</term><term>Numerical simulation</term><term>One dimensional structure</term><term>Semiconductor device</term><term>Ternary compound</term><term>Transport properties</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet champ électrique</term><term>Dispositif semiconducteur</term><term>Méthode Monte Carlo</term><term>Simulation numérique</term><term>Propriété transport</term><term>Nanostructure</term><term>Structure 1 dimension</term><term>Composé minéral</term><term>Composé ternaire</term><term>Aluminium arséniure</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>GaInAs</term><term>8530D</term><term>AlGaAs</term><term>AlInAs</term><term>7363</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Semiconductor modeling and characterization of ternary materials have been performed using simulation. Ternary semiconductors such as Al<sub>x</sub>Ga<sub>1-x</sub>As, Ga<sub>x</sub>ln<sub>1-x</sub>As and Al<sub>x</sub>ln<sub>1-x</sub>As have been studied using Monte Carlo Simulation. Standard parameters like device dimension, donor concentration, temperature, electric field, etc have been considered. Drift velocity with respect to applied electric field in the range of 10kv/cm - 60kv/cm has been observed for three ternary semiconductors. It has been found that up to 30kv/cm, velocities for different compositions show major variations. But after 30kv/cm, they show less variation from each other. It is observed that, with an increase in applied field, the G valley electron population decreases while L and X valley population increases. The scattering methods that have been considered during the study of transport properties are Polar Optical Phonon Scattering (absorption and emission), Intervalley scattering, Ionized Impurity Scattering.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA05><s2>6352</s2></fA05><fA06><s3>p.1</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Study of scattering in 1D nanostructured semiconductor devices using Monte Carlo simulation</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Optoelectronic materials and devices : 5-7 September, 2006, Gwangju, South Korea</s1></fA09><fA11 i1="01" i2="1"><s1>SARWAR (Hasan)</s1></fA11><fA11 i1="02" i2="1"><s1>RAFIQUE (Shahida)</s1></fA11><fA12 i1="01" i2="1"><s1>LEE (Yong Hee)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KOYAMA (Fumio)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>LUO (Yi)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka</s1><s2>Dhaka 1000</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>Han'guk Kwanghakhoe</s1><s3>KOR</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>Zhongguo guang xue xue hui</s1><s3>CHN</s3><s9>org-cong.</s9></fA18><fA18 i1="03" i2="1"><s1>Society of photo-optical instrumentation engineers</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>63522A.1-63522A.8</s2></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA26 i1="01"><s0>0-8194-6447-3</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000153562400670</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0319739</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Semiconductor modeling and characterization of ternary materials have been performed using simulation. Ternary semiconductors such as Al<sub>x</sub>Ga<sub>1-x</sub>As, Ga<sub>x</sub>ln<sub>1-x</sub>As and Al<sub>x</sub>ln<sub>1-x</sub>As have been studied using Monte Carlo Simulation. Standard parameters like device dimension, donor concentration, temperature, electric field, etc have been considered. Drift velocity with respect to applied electric field in the range of 10kv/cm - 60kv/cm has been observed for three ternary semiconductors. It has been found that up to 30kv/cm, velocities for different compositions show major variations. But after 30kv/cm, they show less variation from each other. It is observed that, with an increase in applied field, the G valley electron population decreases while L and X valley population increases. The scattering methods that have been considered during the study of transport properties are Polar Optical Phonon Scattering (absorption and emission), Intervalley scattering, Ionized Impurity Scattering.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F22</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C63</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Effet champ électrique</s0><s5>04</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electric field effect</s0><s5>04</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Efecto campo eléctrico</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Dispositif semiconducteur</s0><s5>11</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Semiconductor device</s0><s5>11</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Dispositivo semiconductor</s0><s5>11</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Méthode Monte Carlo</s0><s5>23</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Monte Carlo method</s0><s5>23</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Método Monte Carlo</s0><s5>23</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Simulation numérique</s0><s5>24</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Numerical simulation</s0><s5>24</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Simulación numérica</s0><s5>24</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Propriété transport</s0><s5>41</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Transport properties</s0><s5>41</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Propiedad transporte</s0><s5>41</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Nanostructure</s0><s5>47</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Nanostructure</s0><s5>47</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Nanoestructura</s0><s5>47</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Structure 1 dimension</s0><s5>48</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>One dimensional structure</s0><s5>48</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Estructura 1 dimensión</s0><s5>48</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Composé minéral</s0><s5>50</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Inorganic compound</s0><s5>50</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Compuesto inorgánico</s0><s5>50</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>51</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Ternary compound</s0><s5>51</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>51</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2><s5>52</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>52</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>53</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>53</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>62</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>62</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>GaInAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>8530D</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>AlGaAs</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>AlInAs</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>7363</s0><s4>INC</s4><s5>86</s5></fC03><fN21><s1>204</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Optoelectronic materials and devices. Conference</s1><s3>KOR</s3><s4>2006</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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